Preparation of a Freestanding AIN Substrate from a Thick AIN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AIN Substrate Prepared by Physical Vapor Transport

被引：119

作者：

Kumagai, Yoshinao ^{[1
]}

Kubota, Yuki ^{[2
]}

Nagashima, Toru ^{[1
,2
]}

Kinoshita, Toru ^{[2
]}

Dalmau, Rafael ^{[3
]}

Schlesser, Raoul ^{[3
]}

Moody, Baxter ^{[3
]}

Xie, Jinqiao ^{[3
]}

Murakami, Hisashi ^{[1
]}

Koukitu, Akinori ^{[1
]}

Sitar, Zlatko ^{[3
,4
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[2] Tokuyama Corp, Tsukuba Res Labs, Tsukuba, Ibaraki 3004247, Japan

[3] HexaTech Inc, Morrisville, NC 27560 USA

[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 05期

关键词：

ALN; HVPE;

D O I：

10.1143/APEX.5.055504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structural and optical quality of a freestanding AIN substrate prepared from a thick AIN layer grown by hydride vapor phase epitaxy (HVPE) on a bulk (0001) AIN substrate prepared by physical vapor transport (PVT) were investigated. The prepared HVPE-AIN substrate was crack- and stress-free. High-resolution X-ray diffraction omega-rocking curves of symmetric (0002) and skew-symmetric (10 (1) over bar1) reflections had small full widths at half maximum (FWHMs) of 31 and 32 arcsec, respectively. Deep-ultraviolet optical transparency of the HVPE-AIN substrate was higher than that of the PVT-AIN substrate, which was related to lower concentrations of C, O impurities, and Al vacancy. (c) 2012 The Japan Society of Applied Physics

引用

页数：3

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