Low-Temperature Chemical Vapor Deposition Growth of Graphene from Toluene on Electropolished Copper Foils

被引：230

作者：

Zhang, Bin ^{[1
,2
,3
]}

Lee, Wi Hyoung ^{[1
,2
]}

Piner, Richard ^{[1
,2
]}

Kholmanov, Iskandar ^{[1
,2
]}

Wu, Yaping ^{[1
,2
]}

Li, Huifeng ^{[1
,2
]}

Ji, Hengxing ^{[1
,2
]}

Ruoff, Rodney S. ^{[1
,2
]}

机构：

[1] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[2] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

[3] Northeastern Univ, Sch Met & Mat, Minist Educ, Key Lab Anisotropy & Texture Mat, Shenyang 110819, Peoples R China

来源：

ACS NANO | 2012年 / 6卷 / 03期

基金：

美国国家科学基金会;

关键词：

monolayer graphene; chemical vapor deposition; low-temperature growth; electropolish; toluene; FILMS;

D O I：

10.1021/nn204827h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A two-step CVD route with toluene as the carbon precursor was used to grow continuous large-area monolayer graphene films on a very flat, electropolished Cu foil surface at 600 degrees C, lower than any temperature reported to date for growing continuous monolayer graphene. Graphene coverage is higher on the surface of electropolished Cu foil than that on the unelectropolished one under the same growth conditions. The measured hole and electron mobilities of the monolayer graphene grown at 600 degrees C were 811 and 190 cm(2)/(V.s), respectively, and the shift of the Dirac point was 18 V. The asymmetry in carrier mobilities can be attributed to extrinsic doping during the growth or transfer. The optical transmittance of graphene at 550 nm was 97.33%, confirming it was a monolayer, and the sheet resistance was similar to 8.02 x 10(3) Omega/square.

引用

页码：2471 / 2476

页数：6

共 26 条

[1]

Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]

[2] Charged-impurity scattering in graphene [J].

Chen, J. -H. ;

Jang, C. ;

Adam, S. ;

Fuhrer, M. S. ;

Williams, E. D. ;

Ishigami, M. .

NATURE PHYSICS, 2008, 4 (05) :377-381

[3] Size effects on tensile and fatigue behaviour of polycrystalline metal foils at the micrometer scale [J].

Dai, C. Y. ;

Zhang, G. P. ;

Yan, C. .

PHILOSOPHICAL MAGAZINE, 2011, 91 (06) :932-945

[4] Growth of large-sized graphene thin-films by liquid precursor-based chemical vapor deposition under atmospheric pressure [J].

Dong, Xiaochen ;

Wang, Peng ;

Fang, Wenjing ;

Su, Ching-Yuan ;

Chen, Yu-Hsin ;

Li, Lain-Jong ;

Huang, Wei ;

Chen, Peng .

CARBON, 2011, 49 (11) :3672-3678

[5] Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects [J].

Ferrari, Andrea C. .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :47-57

[6]

Fromm E, 1984, B ALLOY PHASE DIAGRA, V5, P323

[7] Goos-Hanchen shift of the reflection from nonlinear nanocomposites with electric field tunability [J].

Gao, Dongliang ;

Gao, Lei .

APPLIED PHYSICS LETTERS, 2010, 97 (04)

[8] Chemical vapor deposition synthesis of graphene on copper with methanol, ethanol, and propanol precursors [J].

Guermoune, Abdeladim ;

Chari, Tarun ;

Popescu, Filip ;

Sabri, Shadi S. ;

Guillemette, Jonathan ;

Skulason, Helgi S. ;

Szkopek, Thomas ;

Siaj, Mohamed .

CARBON, 2011, 49 (13) :4204-4210

[9] Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper [J].

Li, Xuesong ;

Magnuson, Carl W. ;

Venugopal, Archana ;

Tromp, Rudolf M. ;

Hannon, James B. ;

Vogel, Eric M. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (09) :2816-2819

[10] Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process [J].

Li, Xuesong ;

Magnuson, Carl W. ;

Venugopal, Archana ;

An, Jinho ;

Suk, Ji Won ;

Han, Boyang ;

Borysiak, Mark ;

Cai, Weiwei ;

Velamakanni, Aruna ;

Zhu, Yanwu ;

Fu, Lianfeng ;

Vogel, Eric M. ;

Voelkl, Edgar ;

Colombo, Luigi ;

Ruoff, Rodney S. .

NANO LETTERS, 2010, 10 (11) :4328-4334

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