Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots

被引：9

作者：

Maximov, M. ^{[1
]}

Gordeev, N. ^{[2
]}

Payusov, A. ^{[2
]}

Shernyakov, Yu ^{[2
]}

Mintairov, S. ^{[1
,2
]}

Kalyuzhnyy, N. ^{[2
]}

Kulagina, M. ^{[2
]}

Nadtochiy, A. ^{[1
,3
]}

Nevedomskiy, V ^{[2
]}

Zhukov, A. ^{[3
]}

机构：

[1] Alferov Univ, Nanophoton Lab, St Petersburg, Russia

[2] Ioffe Inst, St Petersburg, Russia

[3] Natl Res Univ Higher Sch Econ, Int Lab Quantum Optoelect, St Petersburg, Russia

来源：

LASER PHYSICS LETTERS | 2020年 / 17卷 / 09期

基金：

俄罗斯科学基金会;

关键词：

semiconductor lasers; edge-emitters; quantum wells; quantum well-dots; THRESHOLD CHARACTERISTICS;

D O I：

10.1088/1612-202X/aba0bf

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We show that the density of states and gain spectra of InGaAs/GaAs quantum well-dot (QWD) hybrid nanostructures qualitatively differ from that of quantum wells (QWs) and quantum dots. In QWDs, the density of states does not increase to higher energies and ground-state lasing is maintained up to shorter cavities (higher output loss) as compared to QW lasers emitting in the same optical range. The QWD lasers show lower threshold current densities and better temperature stability than the QW ones.

引用

页数：4

共 6 条

[1] Effect of excited-state transitions on the threshold characteristics of a quantum dot laser [J].

Asryan, LV ;

Grundmann, M ;

Ledentsov, NN ;

Stier, O ;

Suris, RA ;

Bimberg, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (03) :418-425

[2] Transverse single-mode edge-emitting lasers based on coupled waveguides [J].

Gordeev, Nikita Yu. ;

Payusov, Alexey S. ;

Shernyakov, Yuri M. ;

Mintairov, Sergey A. ;

Kalyuzhnyy, Nikolay A. ;

Kulagina, Marina M. ;

Maximov, Mikhail V. .

OPTICS LETTERS, 2015, 40 (09) :2150-2152

[3] Light Emitting Devices Based on Quantum Well-Dots [J].

Maximov, Mikhail, V ;

Nadtochiy, Alexey M. ;

Mintairov, Sergey A. ;

Kalyuzhnyy, Nikolay A. ;

Kryzhanovskaya, Natalia, V ;

Moiseev, Eduard, I ;

Gordeev, Nikita Yu ;

Shernyakov, Yuriy M. ;

Payusov, Alexey S. ;

Zubov, Fedor, I ;

Nevedomskiy, Vladimir N. ;

Rouvimov, Sergei S. ;

Zhukov, Alexey E. .

APPLIED SCIENCES-BASEL, 2020, 10 (03)

[4] Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation [J].

Maximov, MV ;

Asryan, LV ;

Shernyakov, YM ;

Tsatsul'nikov, AF ;

Kaiander, IN ;

Nikolaev, VV ;

Kovsh, AR ;

Mikhrin, SS ;

Ustinov, VM ;

Zhukov, AE ;

Alferov, ZI ;

Ledenstov, NN ;

Bimberg, D .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (05) :676-683

[5]

Serin A. A., 2018, Journal of Physics: Conference Series, V1124, DOI 10.1088/1742-6596/1124/4/041005

[6]

Zory P.S., 1993, Quantum well lasers

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