Mechanisms of impurity incorporation during MOVPE growth of m-plane GaN layers on LiAlO2

被引:0
|
作者
Mauder, Christof [1 ]
Reuters, Benjamin [1 ]
Behmenburg, Hannes [1 ]
De Souza, Roger A. [2 ]
Woitok, Joachim F. [3 ]
Chou, Mitch M. C. [4 ]
Heuken, Michael [1 ,5 ]
Kalisch, Holger [1 ]
Jansen, Rolf H. [1 ]
机构
[1] Rhein Westfal TH Aachen, Chair Electromagnet Theory, Kackertstr 15-17, D-52072 Aachen, Germany
[2] Rhein Westfal TH Aachen, Inst Phys Chem, D-52072 Aachen, Germany
[3] PANalyt BV, NL-7600 AA Almelo, Netherlands
[4] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan
[5] AIXTRON AG, D-52134 Herzogenrath, Germany
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期
关键词
MOCVD; m-plane GaN; LiAlO2; substrate; impurities;
D O I
10.1002/pssc.201001027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the oxygen incorporation during growth of m-plane GaN films on LiAlO2 substrates by metal organic vapour phase epitaxy (MOVPE). A broad peak at similar to 550 nm in photoluminescence spectra is probably caused by oxygen impurities. Secondary ion mass spectroscopy (SIMS) confirms this finding and reveals a concentration in the order of 10(19) cm(-3) which is consistent to the measured n-type doping level. A general slow decrease of the oxygen concentration in growth direction is observed. A c-plane GaN film grown on sapphire co-loaded together with a piece of LiAlO2 shows a slightly increased doping concentration compared to a c-plane GaN reference. However, the achieved concentration of similar to 10(17) cm(-3) is much lower compared to m-plane GaN films. Growth of GaN on a backside-coated GaN/LiAlO2 template does neither suppress the impurity incorporation. This implies that oxygen incorporation via the gas phase is not the dominant factor. The SIMS oxygen profile of this GaN film on the template shows a strong peak at the position of growth interruption indicating the formation of a surface oxide. We assume that the m-plane GaN surface has a large affinity for oxygen at the deposition temperature which leads to the high oxygen impurity level. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2050 / 2052
页数:3
相关论文
共 50 条
  • [21] Electrical and optical characterization of M-plane GaN films grown on LiAlO2 substrates
    Rivera, C.
    Misra, P.
    Pau, J. L.
    Munoz, E.
    Brandt, O.
    Grahn, H. T.
    Ploog, K. H.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2548 - +
  • [22] Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO2 substrate
    田密
    修向前
    张荣
    华雪梅
    刘战辉
    韩平
    谢自力
    郑有炓
    半导体学报, 2009, 30 (09) : 13 - 15
  • [23] Optically induced relaxation of anisotropically strained M-plane GaN films on LiAlO2
    Flissikowski, T.
    Brandt, O.
    Misra, P.
    Rahn, H. T.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)
  • [24] Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on γ-LiAlO2
    Xie Zi-Li
    Zhang Rong
    Han Ping
    Zhou Sheng-Ming
    Liu Bin
    Xiu Xiang-Qian
    Chen Peng
    Shi Yi
    Zheng You-Dou
    CHINESE PHYSICS LETTERS, 2008, 25 (07) : 2614 - 2617
  • [25] Growth studies of m-GaN layers on LiAlO2 by MOCVD
    Zou Jun
    Liu Cheng-Xiang
    Zhou Sheng-Ming
    Wang Jun
    Zhou Jian-Hua
    Huang Tao-Hua
    Han Ping
    Xie Zi-Li
    Zhang Rong
    CHINESE PHYSICS, 2006, 15 (11): : 2706 - 2709
  • [26] Structural and optical properties of nonpolar m-plane GaN and GaN-Based LEDs on γ-LiAlO2
    Xie, Zi-Li
    Zhang, Rong
    Han, Ping
    Zhou, Sheng-Ming
    Liu, Bin
    Xiu, Xiang-Qian
    Chen, Peng
    Shi, Yi
    Zheng, You-Dou
    2008, IOP Publishing Ltd (25):
  • [27] Growth studies of m-GaN layers on LiAlO2 by MOCVD
    Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
    不详
    不详
    Chin. Phys., 2006, 11 (2706-2709):
  • [28] Characterization of M-plane GaN thin films grown on misoriented γ-LiAlO2 (100) substrates
    Lin, Yu-Chiao
    Lo, Ikai
    Wang, Ying-Chieh
    Yang, Chen-Chi
    Hu, Chia-Hsuan
    Chou, Mitch M. C.
    Schaadt, D. M.
    JOURNAL OF CRYSTAL GROWTH, 2016, 450 : 197 - 202
  • [29] High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates
    Miasojedovas, S.
    Mauder, C.
    Krotkus, S.
    Kadys, A.
    Malinauskas, T.
    Jarasiunas, K.
    Heuken, M.
    Kalisch, H.
    Vescan, A.
    JOURNAL OF CRYSTAL GROWTH, 2011, 329 (01) : 33 - 38
  • [30] Polarization and temperature dependence of photoluminescence of m-plane GaN grown on γ-LiAlO2 (100) substrate
    Liu, B.
    Kong, J. Y.
    Zhang, R.
    Xie, Z. L.
    Fu, D. Y.
    Xiu, X. Q.
    Chen, P.
    Lu, H.
    Han, P.
    Zheng, Y. D.
    Zhou, S. M.
    APPLIED PHYSICS LETTERS, 2009, 95 (06)