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Band coupling model of electron and hole mediated ferromagnetism in Semiconductors: The case of GaN
被引:7
作者:
Wei, Su-Huai
[1
]
Dalpian, Gustavo M.
[1
]
机构:
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源:
GALLIUM NITRIDE MATERIALS AND DEVICES III
|
2008年
/
6894卷
关键词:
diluted magnetic semiconductors;
band coupling model;
ferromagnetism;
hole;
electron;
GaN;
D O I:
10.1117/12.763494
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Transition metal (TM) doped diluted magnetic semiconductors (DMSs) have many unique physical properties that can be used for magneto-optical and spintronic applications. The DMSs exhibit a wide range of magnetic ordering behavior. For example, Mn doped GaN can be either ferromagnetic or antiferromagnetic, depending on the Mn concentration, carrier density, or pressure. A unified band coupling model based on the p-d and d-d level repulsions between the TM and host elements are developed to explain the hole-induced ferromagnetism. We show that kinetic s-d coupling can be introduced through chemical ordering and strain, thus leading to electron-mediated ferromagnetism. Moreover, by using rare-earth elements (e.g., Gd) as magnetic dopants, the symmetry-allowed s-f coupling can also lead to a large splitting at the conduction band edge, producing electron-mediated ferromagnetism. Our model, therefore, provides a simple guideline for future band structure engineering of magnetic semiconductors.
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页数:11
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