TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs

被引：21
作者：
Milanowski, RJ
Pagey, MP
Massengill, LW
Schrimpf, RD
Wood, ME
Offord, BW
Graves, RJ
Galloway, KF
Nicklaw, CJ
Kelley, EP
机构：
[1] Vanderbilt Univ, Nashville, TN 37240 USA
[2] Dynam Res Corp, San Diego, CA 92138 USA
[3] SPAWAR, San Diego, CA 92138 USA
[4] SILVACO Data Syst, Scottsdale, AZ 86301 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 06期
关键词：
D O I：
10.1109/23.736502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Enhanced back-channel leakage in a mesa SOI device architecture is analyzed. Using integrated process, device, and hole trapping simulation, the cause of the leakage enhancement is identified as enhanced hole trapping in the buried oxide near the island edge. Simulation results suggest this edge effect may be mitigated using body-tied-to-source tabs at the edge of the island. The potential performance and manufacturing impacts of this measure are discussed.
引用
收藏
页码：2593 / 2599
页数：7
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