Interface states characterization in heterojunction solar cells from CV-GV measurements and modeling

被引：14

作者：

Garros, X. ^{[1
]}

Reimbold, G. ^{[1
]}

Cluzel, J. ^{[1
]}

Munoz, D. ^{[2
]}

Ribeyron, P. -J. ^{[2
]}

机构：

[1] CEA Leti Minatec, Grenoble, France

[2] CEA INES, Le Bourget Du Lac, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

Solar Cells; Interface states; CV measurements; Modeling;

D O I：

10.1016/j.mee.2011.03.113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is proposed to extract interface states density D-it at the hydrogenated amorphous/crystalline silicon interfaces (aSi:H/cSi) of heterojunction solar cells - HET. This technique based on CV and GV measurements consists in adapting standard electrical Di, models for MOS structures to the specific case of HET solar cells. In particular, a parasitic conductance is introduced to account for the high leakage current of the diode in the forward regime. The relevance and accuracy of such an analytical model is then demonstrated by comparison with experimental results and with more complex numerical approaches. Finally, this technique enables us to demonstrate the high quality of the interface of HET solar cells which exhibit Di, levels below 10(11) defects per cm(2). (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1247 / 1250

页数：4

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