Noise-Analysis-Based Model of Filamentary Switching ReRAM With ZrOx/HfOx Stacks

被引：33

作者：

Lee, Daeseok ^{[1
]}

Lee, Joonmyoung ^{[1
]}

Jo, Minseok ^{[1
]}

Park, Jubong ^{[1
]}

Siddik, Manzar ^{[1
]}

Hwang, Hyunsang ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Sch Nanobio Mat & Elect, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

关键词：

Low-frequency noise; resistive random access memory (ReRAM); resistive memory; RANDOM TELEGRAPH NOISE; 1/F NOISE; TRAPS; HFO2;

D O I：

10.1109/LED.2011.2148689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose a model based on noise analysis for the filamentary switching mechanism in resistance random access memory having ZrOx/HfOx bilayer stacks. From the noise analysis results, we concluded that the current flowing during high-resistance state can be described as a trap-assisted current that flows through traps. It has been hypothesized that these traps are the cause of the instability of device parameters. To validate this, the noise analysis results of large-area devices were compared with those of small-area devices. As a consequence, we improved the uniformity of device parameters.

引用

页码：964 / 966

页数：3

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