Effect of interface roughness on the density of states of finite barrier height quantum wells

被引：4

作者：

Thongnum, A. ^{[1
]}

Pinsook, U. ^{[2
]}

Khan-Ngern, S. ^{[1
]}

Sa-Yakanit, V. ^{[2
]}

机构：

[1] Khon Kaen Univ, Fac Sci, Dept Phys, Khon Kaen 40002, Thailand

[2] Chulalongkorn Univ, Fac Sci, Dept Phys, Ctr Excellence Forum Theoret Sci, Bangkok 10330, Thailand

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 145卷 / 04期

关键词：

finite barrier height quantum wells; interface roughness; 2D density of states; Feynman path integrals;

D O I：

10.1016/j.ssc.2007.10.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate the density of states of a 2D electron gas in finite barrier height quantum wells with the explicit inclusion of the interface roughness effect. By using Feynman path-integral method, the analytic expression is derived. The results show that the 2D density of states is dependent on the RMS of the fluctuation potential. The interface roughness causes localized states below the subband edge. We also apply the theory to model the finite barrier height quantum wells in AlxGa1-xAs/GaAs. Published by Elsevier Ltd.

引用

页码：207 / 211

页数：5

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