Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

被引:25
作者
Calabrese, Gabriele [1 ]
Pimpolari, Lorenzo [1 ]
Conti, Silvia [1 ]
Mavier, Fabrice [1 ]
Majee, Subimal [2 ]
Worsley, Robyn [2 ]
Wang, Zihao [1 ,3 ]
Pieri, Francesco [1 ]
Basso, Giovanni [1 ]
Pennelli, Giovanni [1 ]
Parvez, Khaled [2 ]
Brooks, David [2 ]
Macucci, Massimo [1 ]
Iannaccone, Giuseppe [1 ]
Novoselov, Kostya S. [3 ,4 ,5 ]
Casiraghi, Cinzia [2 ]
Fiori, Gianluca [1 ]
机构
[1] Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy
[2] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England
[3] Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England
[4] Chongqing 2D Mat Inst, Chongqing 400714, Peoples R China
[5] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
基金
欧盟地平线“2020”; 英国工程与自然科学研究理事会; 欧洲研究理事会;
关键词
1/F NOISE; EXFOLIATED GRAPHENE; PHASE EXFOLIATION; WATER; INKS; GRAPHITE; CONDUCTIVITY; DISPERSIONS; ELECTRONICS; ROADMAP;
D O I
10.1039/c9nr09289g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO2/Si substrates. We found that thermal annealing in vacuum at 450 degrees C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 omega sq(-1) after annealing, and are n-type doped, with carrier concentrations in the low 10(20) cm(-3) range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm(2) V-1 s(-1) for a 480 nm-thick film printed on SiO2/Si. Low-frequency noise characterization shows a 1/f noise behavior and a Hooge parameter in the range of 0.1-1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.
引用
收藏
页码:6708 / 6716
页数:9
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