180kVA three phase SiCGT inverter utilizing novel VF degradation reduction phenomena for SiC devices

被引：8

作者：

Sugawara, Y. ^{[1
]}

Miyanagi, Y. ^{[1
]}

Nakayama, K. ^{[1
]}

Asano, K. ^{[1
]}

Ogata, S. ^{[1
]}

Okada, S. ^{[1
]}

Izumi, T. ^{[1
]}

Tanaka, A. ^{[1
]}

机构：

[1] Kansai Elect Power Co, Power Engn R&D, 3-11-20 Nakoji, Amagasaki, Hyogo 6610974, Japan

来源：

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年

关键词：

D O I：

10.1109/ISPSD.2007.4294985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel phenomena of VF degradation reduction,center dot TEDREC phenomena, was found, which can reduce the degradation by increasing Sic device temperature. To realize safe and repeatable operation of degraded Sic devices and to achieve a drastic reduction in their cost, TEDREC method was developed by using the phenomena. A 180 kVA class Sic inverter was also developed by using the method, which is the largest one among the reported Sic inverters.

引用

页码：273 / +

页数：2

共 10 条

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