Novel method for the interconnection of thin-film silicon solar cells on glass

被引：3

作者：

Walsh, TM ^{[1
]}

Wenham, SR ^{[1
]}

Aberle, AG ^{[1
]}

机构：

[1] Univ New S Wales, Ctr Excellence Adv Silicon Photovolta & Photon, Sydney, NSW 2052, Australia

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488361

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Interconnection remains one of the key challenges involved in making thin-film crystalline silicon (c-Si) solar cells. Because c-Si thin-films have a much higher lateral conductance than amorphous and microcrystalline (a-Si, mu c-Si) silicon films, there is no need for full-area front and rear contacts. Such full-area contacts are usually made from transparent conductive oxide (TCO) which is relatively expensive. The high lateral conductance of c-Si thin-films opens up a lot of scope for innovation and potential further cost savings from the contacting scheme. In this paper we present a novel method for the interconnection of thin-film c-Si solar cells on glass substrates. The method involves laser scribing and localized overdoping of silicon, and a self-aligning maskless photolithography process (SAMPL).

引用

页码：1229 / 1232

页数：4