Characterization of FeCl3 Intercalation Doped CVD Few-Layer Graphene

被引:33
作者
Liu, Wei [1 ]
Kang, Jiahao [1 ]
Banerjee, Kaustav [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
Chemical vapor deposition; few-layer graphene; intercalation doping; solar cells; transparent electrodes; BILAYER GRAPHENE; HIGH-QUALITY;
D O I
10.1109/LED.2016.2597099
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Intercalation doping has been theoretically and experimentally studied on chemical vapor deposition synthesized few-layer graphene. Density functional theory calculations identified FeCl3 as a good dopant to reduce the sheet resistance of few-layer graphene. A simple vapor transfer method is employed to dope graphene. The successful doping is confirmed by the Raman spectra as well as the electrical measurements. After doping, graphene shows p-type conducting behavior and its conductance is significantly enhanced compared with that of undoped graphene. Three-layer graphene exhibited a sheet resistance of 40 Omega/square, while four-layer doped graphene has even smaller sheet resistance of 20 Omega/square, with transmittance >= 90% for both cases, which provide the best combination of sheet resistance and transmittance among all previously reported transparent conductors.
引用
收藏
页码:1246 / 1249
页数:4
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