Transient effects in saturated Raman amplifiers

被引：50
作者：
Chen, CJ [1 ]
Wong, WS [1 ]
机构：
[1] Onetta Inc, San Jose, CA 95134 USA
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 06期
关键词：
D O I：
10.1049/el:20010256
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transient phenomena in Raman optical amplifiers are studied. For the first time, transient effects are observed in saturated Raman amplifiers. An accurate model is developed to explain these transient effects.
引用
收藏
页码：371 / 373
页数：3
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