An in situ XPS study of growth of ITO on amorphous hydrogenated Si: Initial stages of heterojunction formation upon processing of ITO/a-Si:H based solar cell structures

被引：4

作者：

Diplas, Spyros ^{[1
]}

Romanyuk, Andriy ^{[2
]}

Thogersen, Annett ^{[1
]}

Ulyashin, Alexander ^{[1
]}

机构：

[1] SINTEF Mat & Chem, N-0314 Oslo, Norway

[2] Univ Basel, CH-4056 Basel, Switzerland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 01期

关键词：

amorphous materials; indium-tin oxide; silicon; solar cells; X-ray photoelectron spectroscopy; TIN OXIDE-FILMS;

D O I：

10.1002/pssa.201431773

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we studied the interface growth upon deposition of indium-tin oxide (ITO) on amorphous hydrogenated Si (a-Si: H)/crystalline Si (c-Si) structures. The analysis methods used were X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) in combination with in situ film growth with magnetron sputtering. The analysis was complemented with transmission electron microscopy (TEM) of the deposited films. The sputtering equipment was attached to the XPS spectrometer and hence early stage film growth was observed without breaking the vacuum. It was shown that during early deposition stages ITO is reduced by a-Si: H. The reduction is accompanied with formation of metallic In and Sn at the interface. Formation of Sn is more enhanced on a-Si substrates whilst formation of In is more dominant on c-Si substrates. The reduction effect is less intense for amorphous hydrogenated Si as compared to crystalline Si and this is attributed to stronger presence of dangling bonds in the latter than the former. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：47 / 50

页数：4