Half-metallicity and magnetism of CoFeHfGe novel quaternary Heusler alloy in bulk form as well as (100) and (001) surfaces: An ab initio study

被引:24
作者
Paudel, Ramesh [1 ]
Zhou, Fei [1 ]
Liao, Mingqing [1 ]
Zhu, Jingchuan [1 ,2 ]
机构
[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Heilongjiang, Peoples R China
[2] Harbin Inst Technol, Natl Key Lab Sci & Technol Adv Special Environm, Harbin 150001, Heilongjiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Ab initio calculation; CoFeHfGe heusler alloy; Half-metallicity; Magnetic behavior; Surface property; 1ST-PRINCIPLES; SI; FERROMAGNETISM; SEMICONDUCTORS; GAP;
D O I
10.1016/j.jpcs.2019.109190
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, we investigated the electronic and magnetic nature of the LiMgPdSn-type CoFeHfGe quaternary Heusler alloy in the bulk form as well as the (100) and (001) surfaces using density functional theory within the generalized gradient approximation scheme. The bulk CoFeHfGe alloy was predicted to exhibit half-metallic behavior with an electronic band gap of 0.37 eV and 100% spin-polarization at an equilibrium lattice parameter of 6.08 angstrom. The elastic constants and phonon dispersion confirmed the mechanical and dynamical stability of the bulk form considered. The total magnetic moment was determined as 1 mu(B)/f.u. for the CoFeHfGe alloy. The atomic relaxation and surface energy were investigated for the (100) and (001) surfaces of the CoFeHfGe alloy, and the results indicated that the slabs are stable, where CoFe (001) has the lowest surface energy among all of the terminations. For (100) and (001) slabs of the CoFeHfGe alloy, we found that the half-metallicity is destroyed due to the surface states and the HfGe (100) slab has the highest spin polarization of 90.72%, and thus it can be used in giant magnetoresistance devices. The magnetic moments in the layers of the HfGe (100) slabs are similar to the corresponding bulk and magnetic moments of the surface atoms, where they tend to increase with depth in the CoFe (100) slab.
引用
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页数:9
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