Edge and vertical cavity surface emitting InAs quantum dot lasers

被引：16

作者：

Bimberg, D ^{[1
]}

Ledentsov, NN

Grundmann, M

Heinrichsdorff, F

Ustinov, VM

Kop'ev, PS

Alferov, ZHI

Lott, JA

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] USAF, Inst Technol, DECE 2950, Wright Patterson AFB, OH 45433 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

关键词：

D O I：

10.1016/S0038-1101(98)00044-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum dot (QD) edge emitting and vertical cavity lasers are realized using a self-organized growth approach. Threshold current densities at room temperature (RT) of about 60 A cm(-2) for edge emitting and 170 A cm(-2) for vertical cavity lasers are measured. High internal (>96%) and differential (70%) efficiencies are obtained for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation is demonstrated. QD lasers exhibit much larger gain, differential gain and smaller linewidth enhancement factor as compared to conventional quantum well devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1433 / 1437

页数：5

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