Amorphous-SiCBN-B ased metal-semiconductor-metal photodetector for high-temperature applications

被引：23
作者：
Vijayakumar, Arun
Todi, Ravi M. [1 ]
Sundaram, Kalpathy B.
机构：
[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Orlando, FL 32816 USA
[2] IBM Microelect, Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 08期
关键词：
high temperature; metal-semiconductor-metal (MSM); photodetector (PD); SiCBN;
D O I：
10.1109/LED.2007.902083
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed using an amorphous SiCBN film. The amorphous SiCBN film was deposited on the silicon substrate using reactive RF magnetron sputtering. The optoelectronic performance of the SiCBN MSM devices has been examined through photocurrent measurements. Temperature effect, with respect to photocurrent ratios, has been studied. The detector sensitivity factor, which is determined through the PD current ratio, was greater than five at room temperature. Furthermore, the device showed an excellent current sensitivity factor that is greater than two even at a higher temperature of 200 degrees C. The improved performance of the device at higher temperatures could open avenues for high-temperature PD applications.
引用
收藏
页码：713 / 715
页数：3
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