A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers

被引：9

作者：

Niwa, T ^{[1
]}

Ishigaki, T ^{[1
]}

Shimawaki, H ^{[1
]}

Nashimoto, Y ^{[1
]}

机构：

[1] NEC Compound Semicond Devices Ltd, Compound Semicond Dept, Otsu, Shiga 5200833, Japan

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212471

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the InGaP/ GaAs HBT with the GaAs/ InGaP composite collector for a GSM power amplifier. The GaAs/ InGaP composite collector enables to pass the ruggedness test with SWR=10:1 at V-CE >5V, keeping the total collector thickness of around 900nm and the high power added efficiency (PAE). The load-pull measurement result for multi-cell HBTs with total emitter size of 7200mum(2) reveals the PAE of 74% at Pout=35dBm and V-CE=3.5V for the composite collector.

引用

页码：711 / 714

页数：4

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