A composite-collector InGaP/GaAs HBT with high ruggedness for GSM power amplifiers

被引：9
|
作者：
Niwa, T [1 ]
Ishigaki, T [1 ]
Shimawaki, H [1 ]
Nashimoto, Y [1 ]
机构：
[1] NEC Compound Semicond Devices Ltd, Compound Semicond Dept, Otsu, Shiga 5200833, Japan
来源：
2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年
关键词：
D O I：
10.1109/MWSYM.2003.1212471
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on the InGaP/ GaAs HBT with the GaAs/ InGaP composite collector for a GSM power amplifier. The GaAs/ InGaP composite collector enables to pass the ruggedness test with SWR=10:1 at V-CE >5V, keeping the total collector thickness of around 900nm and the high power added efficiency (PAE). The load-pull measurement result for multi-cell HBTs with total emitter size of 7200mum(2) reveals the PAE of 74% at Pout=35dBm and V-CE=3.5V for the composite collector.
引用
收藏
页码：711 / 714
页数：4
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