Silicon wafer cleaning processes monitoring by the surface charge profiler method

被引：0

作者：

Danel, A ^{[1
]}

Besson, P

Lardin, T

Tardif, F

机构：

[1] EURIS, Ctr Alp, FR-38430 Moirans, France

[2] ST Microelect, FR-38290 Crolles, France

[3] Gressi Leti CEA G, FR-38054 Grenoble, France

来源：

ULTRA CLEAN PROCESSING OF SILICON SURFACES 2000 | 2001年 / 76-77卷

关键词：

cleaning; contamination; monitoring;

D O I：

10.4028/www.scientific.net/SSP.76-77.47

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high sensitivity of the SCP method to traces of metallic contamination on silicon wafers is used for the control of cleaning steps. Feasibility of in-line, non-invasive, straightforward monitoring using production wafers is demonstrated. Specific protocol of measurement allows the use of surface recombination lifetime as sensitive parameter for detection of surface contamination, with sensitivity as low as a few 10(9) at/cm(2).

引用

页码：47 / 50

页数：4

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