Microwave dielectric relaxation of the polycrystalline (Ba, Sr)TiO3 thin films -: art. no. 182904

被引：18

作者：

Moon, T ^{[1
]}

Lee, B

Kim, TG

Oh, J

Noh, YW

Nam, S

Park, B

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea

[3] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 18期

关键词：

D O I：

10.1063/1.1923760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microwave dielectric properties of the (Ba,Sr)TiO3 thin films annealed at various oxygen pressures ranging from 5 to 500 mTorr were investigated over the frequency range 0.5-5 GHz using a circular-patch capacitor geometry. The dielectric constant (epsilon) followed Curie-von Schweidler relaxation in the microwave-frequency range; and the degree of relaxation corresponded qualitatively with the measured dielectric loss (tan delta). As the oxygen pressure varied, the dielectric loss had a maximum value of similar to 0.03 at 100 mTorr, and its behavior was correlated with the Raman strength of the polar modes. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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