High Performance of Midwave Infrared HgCdTe e-Avalanche Photodiode Detector

被引：16

作者：

Singh, Anand ^{[1
,2
]}

Shukla, A. K. ^{[2
]}

Pal, Ravinder ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

[2] IIT Delhi, Dept Phys, Delhi 110016, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 04期

关键词：

Infrared detector; HgCdTe e-APD; differential Hall; thermal imaging; DARK CURRENT;

D O I：

10.1109/LED.2015.2400571

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports on the design and fabrication of HgCdTe electron-avalanche photodiode (e-APD) for low dark current and high gain for imaging applications. HgCdTe e-APD photodiodes were fabricated in the n(+)-nu-p(+) configuration for FPA at 30 mu m x 30 mu m pitch. Process for creating the required carrier profile and compositional grading in the absorption and multiplication regions was developed. Graded bandgap profile in the absorption region has been introduced. Shallow mesa etch isolation and effective passivation of side walls were introduced to control lateral currents. High quantum efficiency of 65% makes these APDs suitable for applications like quantum encryption. These measures helped in achieving high avalanche gain of 5550 at 8 V reverse bias in HgCdTe MWIR e-APD for the first time.

引用

页码：360 / 362

页数：3