Nanostructural field emission triodes for high operation speed microsystems

Construction of the nanostructural field emission triodes (FETs), formed on the basis of porous anodic alumina, is considered. The mathematical model, describing the basic physical processes occurring in nanostructural field emission triodes, has been developed. By means of this model the calculations of the distribution of potentials and electric field intensities inside triode structures and also of the I-V characteristics and their differential parameters have been carried out. Operation speed and possible degree of integration of the developed nanostructural field emission triodes have been estimated. The description of technology for fabricating the planar two-level interconnection system, based on valve metals and their oxides, and its electrophysical characteristics are presented. This technology is fully compatible with that for fabricating nanostructural field emission triodes, that allows to create on their basis, in a common technological cycle, high integrated, functionally completed digital logic elements and microsystems.