Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation

被引：76
作者：
Wenisch, J. [1 ]
Gould, C.
Ebel, L.
Storz, J.
Pappert, K.
Schmidt, M. J.
Kumpf, C.
Schmidt, G.
Brunner, K.
Molenkamp, L. W.
机构：
[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
[2] Univ Wurzburg, Phys Inst EP2, D-97074 Wurzburg, Germany
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.99.077201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.
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页数：4
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