The effect of lamps radius on thermal stresses for rapid thermal processing system

被引:8
作者
Chao, CK [1 ]
Hung, SY
Yu, CC
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Mech Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
来源
JOURNAL OF MANUFACTURING SCIENCE AND ENGINEERING-TRANSACTIONS OF THE ASME | 2003年 / 125卷 / 03期
关键词
D O I
10.1115/1.1579048
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The concept of rapid thermal processing has many potential applications in microelectronics manufacturing, but the details of chamber design remains all active area of research. In this work the influence of lamps radius on the thermal stresses in a wafer during the cooling process is studied in detail. Since the equations governing the present thermal-elastic system are coupled in nature, the solution for the temperature and stresses must proceed simultaneously by using a fully implicit finite difference method. After the thermal stresses art obtained, the optimum lamps radii for various heights of the chamber under the constant power ramp-down control scheme are determined based on the maximum shear stress failure criterion. The shortest cooling time that can significantly reduce the thermal budget and dopant redistribution is also predicted by applying the maximum stress control scheme. The result obtained is useful in the design of a reliable rapid thermal processor based oil a more practical consideration, thermal stress.
引用
收藏
页码:504 / 511
页数:8
相关论文
共 24 条
[1]  
Anderson DA, 1984, COMPUTATIONAL FLUID
[2]   DEFECTS INTRODUCED IN SILICON-WAFERS DURING RAPID ISOTHERMAL ANNEALING - THERMOELASTIC AND THERMOPLASTIC EFFECTS [J].
BENTINI, G ;
CORRERA, L ;
DONOLATO, C .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2922-2929
[3]  
Boley B.A., 1960, Theory of Thermal Stresses
[4]   TRANSIENT EFFECTS IN RAPID THERMAL-PROCESSING [J].
CAMPBELL, SA ;
KNUTSON, KL .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1992, 5 (04) :302-307
[5]   STEADY-STATE THERMAL UNIFORMITY AND GAS-FLOW PATTERNS IN A RAPID THERMAL-PROCESSING CHAMBER [J].
CAMPBELL, SA ;
AHN, KH ;
KNUTSON, KL ;
LIU, BYH ;
LEIGHTON, JD .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1991, 4 (01) :14-20
[6]   A CONTRIBUTION TO OPTIMAL LAMP DESIGN IN RAPID THERMAL-PROCESSING [J].
CHO, YM ;
PAULRAJ, A ;
KAILATH, T ;
XU, GH .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1994, 7 (01) :34-41
[7]   Characterisation of low energy boron implantation and fast ramp-up rapid thermal annealing [J].
Collart, EJH ;
de Cock, G ;
Murrell, AJ ;
Foad, MA .
RAPID THERMAL AND INTEGRATED PROCESSING VII, 1998, 525 :227-235
[8]   THERMAL MODELING OF A WAFER IN A RAPID THERMAL PROCESSOR [J].
DILHAC, JM ;
NOLHIER, N ;
GANIBAL, C ;
ZANCHI, C .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1995, 8 (04) :432-439
[9]   A MODEL FOR RAPID THERMAL-PROCESSING - ACHIEVING UNIFORMITY THROUGH LAMP CONTROL [J].
GYURCSIK, RS ;
RILEY, TJ ;
SORRELL, FY .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1991, 4 (01) :9-13
[10]   The effect of patterns on thermal stress during rapid thermal processing of silicon wafers [J].
Hebb, JP ;
Jensen, KF .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1998, 11 (01) :99-107