Dielectric relaxation and charge carrier mechanism in nanocrystalline Ce-Dy ionic conductors

被引:32
作者
Anirban, Sk. [1 ,2 ]
Dutta, Abhigyan [1 ]
机构
[1] Univ Burdwan, Dept Phys, Burdwan 713104, W Bengal, India
[2] Govt Gen Degree Coll, Dept Phys, Singur 712409, Hooghly, India
来源
RSC ADVANCES | 2016年 / 6卷 / 55期
关键词
TRANSPORT-PROPERTIES; GRAIN-BOUNDARY; DOPED CERIA; SOLID ELECTROLYTES; AC-IMPEDANCE; GD; CONDUCTIVITY; BULK; ND; SM;
D O I
10.1039/c6ra06654b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ion dynamics in pure and Dy containing nanoceria has been investigated in the light of different defect associates and their mutual interactions. The samples were prepared through citrate-nitrate auto-ignition method and their single-phase cubic fluorite structure was confirmed from X-ray diffraction and high resolution transmission electron microscopy analysis. The complex impedance spectra showed both grain and grain boundary contribution to total conductivity. The concentration dependent conductivity variation has been discussed with the help of oxygen vacancy concentration and their interactions with the defect associates. The frequency dependence of dielectric permittivity and electric modulus has been analyzed using Havriliak-Negami formalism. The relaxation mechanism is found to be dependent on the formation of different dimers and trimers. Modulus analysis has established the charge re-orientation relaxation of the defects associates. The time-temperature superposition principle has been established by scaling of different spectra.
引用
收藏
页码:49852 / 49861
页数:10
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