Study on the Adhesion Force Between Ga-Doped ZnO Thin Films and Polymer Substrates

被引：8

作者：

Gong, Li ^{[1
,2
]}

Liu, Yunzhen ^{[1
]}

Liu, Fangyang ^{[2
,3
]}

Jiang, Liangxing ^{[3
]}

机构：

[1] Changsha Univ Sci & Technol, Sch Mat Sci & Engn, Changsha 410114, Hunan, Peoples R China

[2] Changsha Univ Sci & Technol, Hunan Prov Engn Res Ctr Elect Transportat & Smart, Changsha 410114, Hunan, Peoples R China

[3] Cent S Univ, Sch Met & Environm, Changsha 410083, Hunan, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2019年 / 19卷 / 01期

基金：

中国国家自然科学基金;

关键词：

ZnO Transparent Conductive Film; Flexibility; Adhesion Force; ZINC-OXIDE; ROOM-TEMPERATURE; OPTICAL-PROPERTIES; DEPOSITION; TRANSPARENT; PRESSURE;

D O I：

10.1166/jnn.2019.16451

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Flexible Ga doped ZnO (GZO) transparent conductive thin films were prepared on polycarbonate (PC) substrates at room temperature by magnetron sputtering. The adhesive property between the GZO film and the PC substrate was investigated quantitatively by the scratch test, which is designed for the quantitative assessment of the mechanical integrity of coated surfaces. The effect of the sputtering pressures on the adhesion forces for the GZO films was investigated. When the sputtering pressure varied from 0.2 to 0.5 Pa, no obvious adhesion force alteration was observed. However, when the sputtering pressure was increased to 0.7 Pa, the adhesion force was decreased. The lowest square resistance of the GZO film was 18.6 Omega/sq. Regardless of the sputtering pressure, the transmittance in the visible light was about 90%. When the sputtering pressure was 0.4 Pa, the optimal figure of merit (Phi(TC)) was 2.5 x 10(-2) Omega(-1), indicating that the optimal pressure was 0.4 Pa.

引用

页码：240 / 244

页数：5

共 27 条

[1]

CALLITY B, 1959, ELEMENT XRAY DIFFRAC, P99

[2] Transparent and conducting Ga-doped ZnO films on flexible substrates prepared by sol-gel method [J].

Duan, Libing ;

Zhao, Xiaoru ;

Zhang, Yangyang ;

Zhou, Jianshuo ;

Zhao, Tingjian ;

Geng, Wangchang .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (12) :8669-8674

[3] Fabrication of flexible Al-doped ZnO films via sol-gel method [J].

Duan, Libing ;

Zhao, Xiaoru ;

Zhang, Yangyang ;

Shen, Hao ;

Liu, Ruidi .

MATERIALS LETTERS, 2016, 162 :199-202

[4]

Dupont Teijin Films, KAL 1020 TECHN DAT S

[5] Effects of argon pressure and r.f. power on magnetron sputtered aluminum doped ZnO thin films [J].

Duygulu, N. Evcimen ;

Kodolbas, A. O. ;

Ekerim, A. .

JOURNAL OF CRYSTAL GROWTH, 2014, 394 :116-125

[6] Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties [J].

Ellmer, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (04) :R17-R32

[7] Deposition of Al doped ZnO thin films on the different substrates with radio frequency magnetron sputtering [J].

Elmas, Saliha ;

Korkmaz, Sadan .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2013, 359 :69-72

[8] On the properties of aluminium doped zinc oxide thin films deposited on plastic substrates from ceramic targets [J].

Girtan, M. ;

Vlad, A. ;

Mallet, R. ;

Bodea, M. A. ;

Pedarnig, J. D. ;

Stanculescu, A. ;

Mardare, D. ;

Leontie, L. ;

Antohe, S. .

APPLIED SURFACE SCIENCE, 2013, 274 :306-313

[9] Room-temperature deposition of flexible transparent conductive Ga-doped ZnO thin films by magnetron sputtering on polymer substrates [J].

Gong, Li ;

Liu, Yun-Zhen ;

Liu, Fang-Yang ;

Jiang, Liang-Xing .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (08) :6093-6098

[10] Optimization of oxygen and pressure of ZnO:Al films deposited on PMMA substrates by facing target sputtering [J].

Guo, Tingting ;

Dong, Guobo ;

Liu, Qirong ;

Wang, Mengying ;

Wang, Mei ;

Gao, Fangyuan ;

Chen, Qiang ;

Yan, Hui ;

Diao, Xungang .

SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 :552-562

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