Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

被引:0
|
作者
Khan, Arshad [1 ]
Lee, Sangeon [2 ]
Jang, Taehee [3 ]
Xiong, Ze [4 ]
Zhang, Cuiping [1 ,5 ]
Tang, Jinyao [4 ]
Guo, L. Jay [2 ,3 ]
Li, Wen-Di [1 ,5 ]
机构
[1] Univ Hong Kong, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
[2] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[4] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
[5] HKU Shenzhen Inst Res & Innovat, Shenzhen, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Engineering; Issue; 124; Embedded metal mesh; flexible transparent electrode; solution-processed; lithography; electrodeposition; thermal imprint transfer; DOPED INDIUM OXIDE; NANOWIRE NETWORKS; FILMS; CONDUCTOR;
D O I
10.3791/56019
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Here, the authors report the embedded metal-mesh transparent electrode (EMTE), a new transparent electrode (TE) with a metal mesh completely embedded in a polymer film. This paper also presents a low-cost, vacuum-free fabrication method for this novel TE; the approach combines lithography, electroplating, and imprint transfer (LEIT) processing. The embedded nature of the EMTEs offers many advantages, such as high surface smoothness, which is essential for organic electronic device production; superior mechanical stability during bending; favorable resistance to chemicals and moisture; and strong adhesion with plastic film. LEIT fabrication features an electroplating process for vacuum-free metal deposition and is favorable for industrial mass production. Furthermore, LEIT allows for the fabrication of metal mesh with a high aspect ratio (i.e., thickness to linewidth), significantly enhancing its electrical conductance without adversely losing optical transmittance. We demonstrate several prototypes of flexible EMTEs, with sheet resistances lower than 1 Omega/sq and transmittances greater than 90%, resulting in very high figures of merit (FoM) - up to 1.5 x 10(4) - which are amongst the best values in the published literature.
引用
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页数:11
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