Magnetic domain reversal behavior for various patterned hole depths

被引：1
|
作者：
Wu, TH [1 ]
Ye, LX
Yeh, CS
Huang, YW
Huang, BR
Wu, JC
机构：
[1] Natl Yunlin Univ Sci & Technol, Taiwan SPIN Res Ctr, Toulin 640, Taiwan
[2] Natl Yunlin Univ Sci & Technol, Grad Sch Engn Sci & Technol, Toulin 640, Taiwan
[3] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
[4] Natl Changhua Univ Educ, Taiwan SPIN Res Ctr, Changhua 500, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 02期
关键词：
coercivity; hole arrays; magnetic domain; patterned material; pinning effect;
D O I：
10.1109/TMAG.2004.842132
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have measured the domain reversal behavior for amorphous alloys of a rare earth-transition metal DyFeCo thin film with hole arrays by means of a modified Kerr microscope. We found that the shallow hole arrays had sharper domain boundaries than the deeper hole arrays when an applied magnetic field nears the coercivity. We also found that, when the hole depth is shallower, the magnetic anisotropy becomes more profound for the domain pinning effect. Moreover, the magnetic domain pinning effect due to the hole barrier becomes significantly practical as the hole depth approaches the film thickness.
引用
收藏
页码：950 / 952
页数：3
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