Si based GeSn light emitter: mid-infrared device in Si photonics

被引:14
|
作者
Yu, S. -Q. [1 ]
Ghetmiri, S. A. [1 ]
Du, W. [1 ]
Margetis, J. [2 ]
Zhou, Y. [1 ]
Mosleh, A. [1 ]
Al-Kabi, S. [1 ]
Nazzal, A. [3 ]
Sun, G. [4 ]
Soref, R. A. [4 ]
Tolle, J. [2 ]
Li, B. [5 ]
Naseem, H. A. [1 ]
机构
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] ASM, Phoenix, AZ 85034 USA
[3] Wilkes Univ, Elect Engn & Phys Dept, Wilkes Barre, PA 18766 USA
[4] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA
[5] Arktonics LLC, Fayetteville, AR 72701 USA
来源
SILICON PHOTONICS X | 2015年 / 9367卷
关键词
GeSn bandgap; Infrared; light emitting diodes;
D O I
10.1117/12.2077778
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm(2).
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Silicon and germanium mid-infrared photonics
    Mashanovich, G. Z.
    Reed, G. T.
    Nedeljkovic, M.
    Penades, J. Soler
    Mitchell, C. J.
    Khokhar, A. Z.
    Littlejohns, C. J.
    Stankovic, S.
    Chen, X.
    Shen, L.
    Healy, N.
    Peacock, A. C.
    Alonso-Ramos, C.
    Ortega-Monux, A.
    Wanguemert-Perez, G.
    Molina-Fernandez, I.
    Cheben, P.
    Ackert, J. J.
    Knights, A. P.
    Gardes, F. Y.
    Thomson, D. J.
    QUANTUM SENSING AND NANO ELECTRONICS AND PHOTONICS XIII, 2016, 9755
  • [42] Photoinduced mid-infrared intraband light absorption and photoconductivity in Ge/Si quantum dots
    Sofronov, A. N.
    Vorobjev, L. E.
    Firsov, D. A.
    Panevin, V. Yu.
    Balagula, R. M.
    Werner, P.
    Tonkikh, A. A.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 87 : 53 - 57
  • [43] The GeSn laser - Enabler for monolithic integration of photonics on Si
    Wirths, Stephan
    Geiger, Richard
    Ikonic, Zoran
    Schulte-Braucks, C.
    Stange, D.
    von den Driesch, N.
    Hartmann, Jean-Michel
    Manti, Siegfried
    Sigg, Hans
    Buca, Dan
    Gruetzmacher, Detlev
    2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2015, : 165 - 166
  • [44] Mid-Infrared n-Ge on Si Plasmonic Based Microbolometer Sensors
    Gallacher, Kevin
    Millar, Ross W.
    Giliberti, Valeria
    Calandrini, Eugenio
    Baldassarre, Leonetta
    Frigerio, Jacopo
    Ballabio, Andrea
    Sakat, Emilie
    Pellegrini, Giovanni
    Isella, Giovanni
    Ortolani, Michele
    Biagioni, Paolo
    Paul, Douglas J.
    2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP), 2017, : 3 - 4
  • [45] A Simulation-Based Study of Back-Illuminated Lateral Ge/GeSn/Ge Photodetectors on Si Platform for Mid-Infrared Image Sensing
    Kumar, Harshvardhan
    Pandey, Ankit Kumar
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 1721 - 1727
  • [46] Tensile-Strained Mid-Infrared GeSn Detectors Wrapped in Si3N4 Liner Stressor: Theoretical Investigation of Impact of Device Architectures
    Zhang, Qingfang
    Liu, Yan
    Zhang, Chunfu
    Huang, Qingzhong
    Hao, Yue
    Han, Genquan
    IEEE PHOTONICS JOURNAL, 2015, 7 (06):
  • [47] Highly efficient GeSn electroabsorprtion modulator using higher-order-mode for mid-infrared Ge-on-Si platform
    Sato, Takanori
    Akie, Minami
    Arai, Masakazu
    Fujisawa, Takeshi
    Saitoh, Kunimasa
    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2017,
  • [48] GeSn/SiGeSn Multiple-Quantum-Well Electroabsorption Modulator With Taper Coupler for Mid-Infrared Ge-on-Si Platform
    Akie, Minami
    Fujisawa, Takeshi
    Sato, Takanori
    Arai, Masakazu
    Saitoh, Kunimasa
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (06)
  • [49] (Si)GeSn nanostructures for Light Emitters
    Rainko, D.
    Stange, D.
    von den Driesch, N.
    Schulte-Braucks, C.
    Mussler, G.
    Ikonic, Z.
    Hartmann, J. M.
    Luysberg, M.
    Mantl, S.
    Grutzmacher, D.
    Buca, D.
    SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS V, 2016, 9891
  • [50] Mid-infrared materials and devices on a Si platform for optical sensing
    Singh, Vivek
    Lin, Pao Tai
    Patel, Neil
    Lin, Hongtao
    Li, Lan
    Zou, Yi
    Deng, Fei
    Ni, Chaoying
    Hu, Juejun
    Giammarco, James
    Soliani, Anna Paola
    Zdyrko, Bogdan
    Luzinov, Igor
    Novak, Spencer
    Novak, Jackie
    Wachtel, Peter
    Danto, Sylvain
    Musgraves, J. David
    Richardson, Kathleen
    Kimerling, Lionel C.
    Agarwal, Anuradha M.
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2014, 15 (01)