Si based GeSn light emitter: mid-infrared device in Si photonics

被引：14
|
作者：
Yu, S. -Q. [1 ]
Ghetmiri, S. A. [1 ]
Du, W. [1 ]
Margetis, J. [2 ]
Zhou, Y. [1 ]
Mosleh, A. [1 ]
Al-Kabi, S. [1 ]
Nazzal, A. [3 ]
Sun, G. [4 ]
Soref, R. A. [4 ]
Tolle, J. [2 ]
Li, B. [5 ]
Naseem, H. A. [1 ]
机构：
[1] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[2] ASM, Phoenix, AZ 85034 USA
[3] Wilkes Univ, Elect Engn & Phys Dept, Wilkes Barre, PA 18766 USA
[4] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA
[5] Arktonics LLC, Fayetteville, AR 72701 USA
来源：
SILICON PHOTONICS X | 2015年 / 9367卷
关键词：
GeSn bandgap; Infrared; light emitting diodes;
D O I：
10.1117/12.2077778
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm(2).
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页数：8
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