Technical Perspectives on Applications of Biologically Coupled Gate Field-Effect Transistors

被引:2
作者
Sakata, Toshiya [1 ]
机构
[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
关键词
biosensing; potentiometric biosensor; biologically coupled gate field-effect transistor (Bio-FET); ionic and biomolecular charge; Debye length; measurement solution; pH response; subthreshold slope; semiconductive material; integrated device; IMPRINTED POLYMER INTERFACE; DNA; CELL; FET; IMMUNODETECTION; IMMOBILIZATION; TRANSDUCTION;
D O I
10.3390/s22134991
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Biosensing technologies are required for point-of-care testing (POCT). We determine some physical parameters such as molecular charge and mass, redox potential, and reflective index for measuring biological phenomena. Among such technologies, biologically coupled gate field-effect transistor (Bio-FET) sensors are a promising candidate as a type of potentiometric biosensor for the POCT because they enable the direct detection of ionic and biomolecular charges in a miniaturized device. However, we need to reconsider some technical issues of Bio-FET sensors to expand their possible use for biosensing in the future. In this perspective, the technical issues of Bio-FET sensors are pointed out, focusing on the shielding effect, pH signals, and unique parameters of FETs for biosensing. Moreover, other attractive features of Bio-FET sensors are described in this perspective, such as the integration and the semiconductive materials used for the Bio-FET sensors.
引用
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页数:7
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