Technical Perspectives on Applications of Biologically Coupled Gate Field-Effect Transistors

被引:2
作者
Sakata, Toshiya [1 ]
机构
[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
关键词
biosensing; potentiometric biosensor; biologically coupled gate field-effect transistor (Bio-FET); ionic and biomolecular charge; Debye length; measurement solution; pH response; subthreshold slope; semiconductive material; integrated device; IMPRINTED POLYMER INTERFACE; DNA; CELL; FET; IMMUNODETECTION; IMMOBILIZATION; TRANSDUCTION;
D O I
10.3390/s22134991
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Biosensing technologies are required for point-of-care testing (POCT). We determine some physical parameters such as molecular charge and mass, redox potential, and reflective index for measuring biological phenomena. Among such technologies, biologically coupled gate field-effect transistor (Bio-FET) sensors are a promising candidate as a type of potentiometric biosensor for the POCT because they enable the direct detection of ionic and biomolecular charges in a miniaturized device. However, we need to reconsider some technical issues of Bio-FET sensors to expand their possible use for biosensing in the future. In this perspective, the technical issues of Bio-FET sensors are pointed out, focusing on the shielding effect, pH signals, and unique parameters of FETs for biosensing. Moreover, other attractive features of Bio-FET sensors are described in this perspective, such as the integration and the semiconductive materials used for the Bio-FET sensors.
引用
收藏
页数:7
相关论文
共 59 条
  • [1] Understanding the signal amplification in dual-gate FET-based biosensors
    Ahn, Jae-Hyuk
    Choi, Bongsik
    Choi, Sung-Jin
    [J]. JOURNAL OF APPLIED PHYSICS, 2020, 128 (18)
  • [2] ION-SENSITIVE FIELD-EFFECT TRANSISTORS WITH INORGANIC GATE OXIDE FOR PH SENSING
    AKIYAMA, T
    UJIHIRA, Y
    OKABE, Y
    SUGANO, T
    NIKI, E
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1936 - 1941
  • [4] A DNA diagnostic biosensor: development, characterisation and performance
    Berney, H
    West, J
    Haefele, E
    Alderman, J
    Lane, W
    Collins, JK
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2000, 68 (1-3) : 100 - 108
  • [5] FIELD-EFFECT TRANSISTOR SENSITIVE TO PENICILLIN
    CARAS, S
    JANATA, J
    [J]. ANALYTICAL CHEMISTRY, 1980, 52 (12) : 1935 - 1937
  • [6] Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum
    Chu, Chia-Ho
    Sarangadharan, Indu
    Regmi, Abiral
    Chen, Yen-Wen
    Hsu, Chen-Pin
    Chang, Wen-Hsin
    Lee, Geng-Yen
    Chyi, Jen-Inn
    Chen, Chih-Chen
    Shiesh, Shu-Chu
    Lee, Gwo-Bin
    Wang, Yu-Lin
    [J]. SCIENTIFIC REPORTS, 2017, 7
  • [7] INTEGRATED MICRO MULTI ION SENSOR USING FIELD-EFFECT OF SEMICONDUCTOR
    ESASHI, M
    MATSUO, T
    [J]. IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1978, 25 (02) : 184 - 192
  • [8] Electronic detection of DNA by its intrinsic molecular charge
    Fritz, J
    Cooper, EB
    Gaudet, S
    Sorger, PK
    Manalis, SR
    [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2002, 99 (22) : 14142 - 14146
  • [9] A NEURON-SILICON JUNCTION - A RETZIUS CELL OF THE LEECH ON AN INSULATED-GATE FIELD-EFFECT TRANSISTOR
    FROMHERZ, P
    OFFENHAUSSER, A
    VETTER, T
    WEIS, J
    [J]. SCIENCE, 1991, 252 (5010) : 1290 - 1293
  • [10] Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors
    Gao, Xuan P. A.
    Zheng, Gengfeng
    Lieber, Charles M.
    [J]. NANO LETTERS, 2010, 10 (02) : 547 - 552