High Current Ripple for Power Density and Efficiency Improvement in Wide Bandgap Transistor-Based Buck Converters

被引:43
作者
Cougo, Bernardo [1 ,2 ]
Schneider, Henri [1 ]
Meynard, Thierry [2 ]
机构
[1] LAAS Lab, F-31031 Toulouse, France
[2] Laplace Lab, F-31071 Toulouse, France
关键词
Buck converter; converter design; silicon carbide MOSFET; switching losses; zero voltage switching; INVERTER; MOSFET;
D O I
10.1109/TPEL.2014.2360547
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the recent development and availability of wide bandgap devices in the market, more and more power converters are being designed with such devices. Given their fast commutation, when compared to their equivalent Si-based counterparts, these new devices allow increasing the converter's efficiency and/or power density. However, in order to fully avail these new devices, one should precisely know their switching characteristics and exploit it the best way possible. This paper recalls our own precise method to measure separately turn-on and turn-off energies of wide bandgap devices. This method is applied to commercially available SiC and GaN transistors and results show that they present much lower turn-off than turn-on energies. For that reason, we show that a SiC-based buck converter must have high current ripple in the output filter inductor in order to decrease transistor losses. Analysis of these losses as well as experimental results are presented. Finally, the precise design of a 2-kW SiC-based buck converter for aircraft applications is performed for different current ripples and switching frequencies. We show that current ripple higher than 250% of the dc load current significantly decreases the converter's losses, and consequently allows the increase of the switching frequency, which reduces the system volume and weight.
引用
收藏
页码:4489 / 4504
页数:16
相关论文
共 41 条
  • [31] A New Current Phasor-Controlled ZVS Twin Half-Bridge High-Frequency Resonant Inverter for Induction Heating
    Mishima, Tomokazu
    Takami, Chikanori
    Nakaoka, Mutsuo
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2014, 61 (05) : 2531 - 2545
  • [32] Solid-State Transformer Architecture Using AC-AC Dual-Active-Bridge Converter
    Qin, Hengsi
    Kimball, Jonathan W.
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2013, 60 (09) : 3720 - 3730
  • [33] Low-Loss High-Performance Base-Drive Unit for SiC BJTs
    Rabkowski, Jacek
    Tolstoy, Georg
    Peftitsis, Dimosthenis
    Nee, Hans-Peter
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (05) : 2633 - 2643
  • [34] Reusch D, 2012, APPL POWER ELECT CO, P38, DOI 10.1109/APEC.2012.6165796
  • [35] Vallon J., 2003, THESIS I NATL POLYTE
  • [36] Venkatachalam K, 2002, ANN WORKSH COMP POW, P36, DOI 10.1109/CIPE.2002.1196712
  • [37] Videau N., 2013, P IEEE WID BANDG POW
  • [38] von Bloh J., 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370), P373, DOI 10.1109/IAS.1999.799983
  • [39] Analysis of a ripple-free input-current boost converter with discontinuous conduction characteristics
    Wang, J
    Dunford, WG
    Mauch, K
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 1997, 12 (04) : 684 - 694
  • [40] A High-Temperature SiC Three-Phase AC-DC Converter Design for >100°C Ambient Temperature
    Wang, Ruxi
    Boroyevich, Dushan
    Ning, Puqi
    Wang, Zhiqiang
    Wang, Fei
    Mattavelli, Paolo
    Ngo, Khai D. T.
    Rajashekara, Kaushik
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2013, 28 (01) : 555 - 572