High Current Ripple for Power Density and Efficiency Improvement in Wide Bandgap Transistor-Based Buck Converters

被引:43
作者
Cougo, Bernardo [1 ,2 ]
Schneider, Henri [1 ]
Meynard, Thierry [2 ]
机构
[1] LAAS Lab, F-31031 Toulouse, France
[2] Laplace Lab, F-31071 Toulouse, France
关键词
Buck converter; converter design; silicon carbide MOSFET; switching losses; zero voltage switching; INVERTER; MOSFET;
D O I
10.1109/TPEL.2014.2360547
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the recent development and availability of wide bandgap devices in the market, more and more power converters are being designed with such devices. Given their fast commutation, when compared to their equivalent Si-based counterparts, these new devices allow increasing the converter's efficiency and/or power density. However, in order to fully avail these new devices, one should precisely know their switching characteristics and exploit it the best way possible. This paper recalls our own precise method to measure separately turn-on and turn-off energies of wide bandgap devices. This method is applied to commercially available SiC and GaN transistors and results show that they present much lower turn-off than turn-on energies. For that reason, we show that a SiC-based buck converter must have high current ripple in the output filter inductor in order to decrease transistor losses. Analysis of these losses as well as experimental results are presented. Finally, the precise design of a 2-kW SiC-based buck converter for aircraft applications is performed for different current ripples and switching frequencies. We show that current ripple higher than 250% of the dc load current significantly decreases the converter's losses, and consequently allows the increase of the switching frequency, which reduces the system volume and weight.
引用
收藏
页码:4489 / 4504
页数:16
相关论文
共 41 条
  • [1] Aggeler D., 2008, IEEE APPL POW EL C E
  • [2] Dv/Dt-Control Methods for the SiC JFET/Si MOSFET Cascode
    Aggeler, Daniel
    Canales, Francisco
    Biela, Juergen
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2013, 28 (08) : 4074 - 4082
  • [3] [Anonymous], P EL SYST AIRCR RAIL
  • [4] [Anonymous], 1997, PUBL CISPR, V22
  • [5] Biela J., 2007, IEEJ IEEE POW CONV C
  • [6] SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors
    Biela, Juergen
    Schweizer, Mario
    Waffler, Stefan
    Kolar, Johann W.
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2011, 58 (07) : 2872 - 2882
  • [7] Brandelero J, 2013, IEEE IND ELEC, P246, DOI 10.1109/IECON.2013.6699143
  • [8] A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications
    Chen, Zheng
    Yao, Yiying
    Boroyevich, Dushan
    Ngo, Khai D. T.
    Mattavelli, Paolo
    Rajashekara, Kaushik
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2307 - 2320
  • [9] Christen D., 2010, IEEE IEEJ INT POW EL
  • [10] Zero Voltage Switching Technique for Bidirectional DC/DC Converters
    Corradini, Luca
    Seltzer, Daniel
    Bloomquist, Douglas
    Zane, Regan
    Maksimovic, Dragan
    Jacobson, Boris
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (04) : 1585 - 1594