Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

We report the first demonstration of a dual-metal gate complementary metal oxide semiconductor (CMOS technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide semiconductor field effect transistors (N-MOSFETs) and P-metal oxide semiconductor held effect transistors (P-MOSFETs), respectively. The gate dielectric stack consists of a silicon oxy-nitride interfacial layer and a silicon nitride (Si3N4) dielectric layer formed by a rapid-thermal chemical vapor deposition (RTCVD) process. C-V characteristics show negligible gate depletion. Carrier mobilities comparable to that predicted by the universal mobility model for silicon dioxide (SiO2) are observed.