Current-based testing for deep-submicron VLSIs

被引：16
作者：
Sachdev, M [1 ]
机构：
[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada
来源：
IEEE DESIGN & TEST OF COMPUTERS | 2001年 / 18卷 / 02期
关键词：
D O I：
10.1109/54.914627
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Current-based testing for deep-submicron VLSIs is important because of transistor sensitivity to defects as technology scales. However, unabated increases in leakage current in CMOS devices can make this testing very difficult. This article offers several solutions to this challenging problem.
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收藏
页码：76 / 84
页数：9
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