Low threshold distribution feedback quantum cascade lasers at 7.6 μm grown by gas source molecular beam epitaxy

被引：10
作者：
Li, AZ [1 ]
Xu, GY [1 ]
Zhang, YG [1 ]
Li, H [1 ]
Zhang, X [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
关键词：
molecular beam epitaxy; phosphides; infrared devices; QC-laser;
D O I：
10.1016/j.jcrysgro.2004.12.098
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have demonstrated the first Gas source molecular beam epitaxy (GSMBE) grown distributed feedback quantum cascade laser (DFB QC-laser) laser with low threshold current density operation at 7.6 mu m. High quality DFB QC-laser heterostructures were grown by an one step GSMBE growth procedure. The first-order grating was defined by a holographic technology. A tunable single mode DFB QC-laser operation in pulsed mode with a low threshold current density of 574 A/cm (2) and a peak optical power of 50 mW at 70 K and 7.6 pm have been obtained. The side mode suppression ratio and the maximum single mode wavelength tuning range by changing their heat sink temperature are 23 dB and 20 nm, respectively. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：770 / 774
页数：5
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