Growth and characterization of epitaxial SrBi2Ta2O9 films on (110) SrTiO3 substrates

被引:14
作者
Garg, A
Dunn, S
Barber, ZH
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[2] Cranfield Univ, Sch Ind & Mfg Sci, Cranfield MK43 0AL, Beds, England
关键词
pulsed laser ablation; fluence; SrTiO3; SrBi2Ta2O9;
D O I
10.1080/10584580008215636
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
SrBi2Ta2O9 (SBT) is an attractive material for nonvolatile ferroelectric memory applications. In this paper we report on the deposition of highly epitaxial and smooth SrBi2Ta2O9 films on (110) SrTiO(3)substrates. The films were grown by pulsed laser deposition at temperatures ranging from 600 to 800 degreesC and at various laser fluences from a Bi-excess SET target. The background oxygen pressure was maintained at 28 Pa during the film deposition. Structural characterization of the films was performed by x-ray diffraction. Atomic force microscopy was used to investigate morphology and growth of the films. The films grew with preferred (115) or (116) orientation. The roughness was of the order of unit cell height. The films display a growth pattern resulting in corrugated film morphology.
引用
收藏
页码:13 / 21
页数:9
相关论文
共 25 条
  • [1] Local, nonvolatile electronic writing of epitaxial Pb(Zr0.52Ti0.48)O-3/SrRuO3 heterostructures
    Ahn, CH
    Tybell, T
    Antognazza, L
    Char, K
    Hammond, RH
    Beasley, MR
    Fischer, O
    Triscone, JM
    [J]. SCIENCE, 1997, 276 (5315) : 1100 - 1103
  • [2] FATIGUE OF FERROELECTRIC PBZRXTIYO3 CAPACITORS WITH RU AND RUOX ELECTRODES
    BERNSTEIN, SD
    WONG, TY
    KISLER, Y
    TUSTISON, RW
    [J]. JOURNAL OF MATERIALS RESEARCH, 1993, 8 (01) : 12 - 13
  • [3] BJORMANDER C, 1994, APPL PHYS LETT, V64, P3646, DOI 10.1063/1.111191
  • [4] Control of epitaxial growth for SrBi2Ta2O9 thin films
    Cho, JH
    Bang, SH
    Son, JY
    Jia, QX
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 665 - 667
  • [5] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES
    DEARAUJO, CAP
    CUCHIARO, JD
    MCMILLAN, LD
    SCOTT, MC
    SCOTT, JF
    [J]. NATURE, 1995, 374 (6523) : 627 - 629
  • [6] Oriented growth of SrBi2Ta2O9 ferroelectric thin films
    Desu, SB
    Vijay, DP
    Zhang, X
    He, BP
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1719 - 1721
  • [7] Electrical properties of (001)- and (116)-oriented epitaxial SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition
    Ishikawa, K
    Funakubo, H
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (13) : 1970 - 1972
  • [8] Microstructure of Ba0.5Sr0.5TiO3 thin films on (100)LaAlO3 with SrRuO3 as electrodes
    Jia, QX
    Zhou, DS
    Foltyn, SR
    Wu, XD
    Findikoglu, AT
    Smith, JL
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1997, 75 (02): : 261 - 269
  • [9] Koiwa I, 1998, IEICE T ELECTRON, VE81C, P552
  • [10] FERROELECTRIC MEMORIES
    LARSEN, PK
    CUPPENS, R
    SPIERINGS, GACM
    [J]. FERROELECTRICS, 1992, 128 (1-4) : 265 - 292