III-V Multiple-Gate Field-Effect Transistors With High-Mobility In0.7Ga0.3As Channel and Epi-Controlled Retrograde-Doped Fin

被引：64

作者：

Chin, Hock-Chun ^{[1
]}

Gong, Xiao ^{[1
]}

Wang, Lanxiang ^{[1
]}

Lee, Hock Koon ^{[2
]}

Shi, Luping ^{[2
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[2] Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

FinFET; high mobility; InGaAs; MOSFET; multiple-gate field-effect transistor (MuGFET); retrograde well; MOSFET;

D O I：

10.1109/LED.2010.2091672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an In0.7Ga0.3As n-channel multiplegate field-effect transistor (MuGFET), featuring a lightly doped high-mobility channel with 70% indium and an epi-controlled retrograde-doped fin structure to suppress short-channel effects (SCEs). The retrograde well effectively reduces subsurface punch-through in the bulk MuGFET structure. The multiple-gate structure achieves good electrostatic control of the channel potential and SCEs in the In0.7Ga0.3As n-MuGFETs as compared with planar In0.7Ga0.3As MOSFETs. The In0.7Ga0.3As n-MuGFET with 130-nm channel length demonstrates a drain-induced barrier lowering of 135 mV/V and a drive current exceeding 840 mu A/mu m at V-DS = 1.5 V and V-GS - V-T = 3 V.

引用

页码：146 / 148

页数：3

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