Deterministic control of thin film thickness in physical vapor deposition systems using a multi-aperture mask

被引：21

作者：

Arkwright, J ^{[1
]}

Underhill, I ^{[1
]}

Pereira, N ^{[1
]}

Gross, M ^{[1
]}

机构：

[1] CSIRO Ind Phys, Lindfield, NSW 2070, Australia

来源：

OPTICS EXPRESS | 2005年 / 13卷 / 07期

关键词：

D O I：

10.1364/OPEX.13.002731

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A technique for controlling the thickness profile of a thin film in physical vapor deposition systems is reported. The technique uses a novel mask design with apertures of varying dimension to selectively deposit the required film thickness at predetermined locations across the aperture of the substrate. The technique has been used to correct the thickness uniformity of a 55 mm diameter, 280 mu m thick, lithium niobate wafer to less than 0.5 nm rms, and also to improve the uniformity of deposited films in an Ion Beam Sputtering system to better than 0.5% over a 50 mm aperture. (C) 2005 Optical Society of America.

引用

页码：2731 / 2741

页数：11