Volume fraction of phosphor in silicone has strong impact on microstructure and damage evolution of silicone/phosphor composite, which eventually affect the performance and reliability of light-emitting diodes (LEDs) packaging. In this paper, mechanical response of silicone/phosphor composite under exterior loading is investigated experimentally and numerically. Test samples of silicone with various amount of phosphor are prepared and subjected to tensile loading. Micro-scale morphology and fracture surfaces of samples are observed by scanning electron microscopy (SEM) after tensile tests. Interphase debonding can be identified on fracture surface and cracks are initiated around debonded phosphor particles. In order to provide micro-scale illustrations of the macro-scale behavior, a three dimensional multi-sphere random unit cell (RUC) model is introduced. Silicone matrix is modeled as hyperelastic solid and interphase region is modeled with cohesive law. Both experiment and simulation results demonstrate that, increasing the amount of rigid phosphor stiffens the silicone composite. On the other hand, increasing phosphor amount also shortens the average distance between rigid phosphor particles and intensifies strain localization in silicone matrix, which consequently results in interphase debonding and crack growth in the composite. This effect is regarded as the main mechanism that controls mechanical degradation of the silicone/phosphor composite. (C) 2014 Elsevier Ltd. All rights reserved.
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Univ Maryland, CALCE, College Pk, MD 20742 USAUniv Maryland, CALCE, College Pk, MD 20742 USA
Chang, Moon-Hwan
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Das, Diganta
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Univ Maryland, CALCE, College Pk, MD 20742 USAUniv Maryland, CALCE, College Pk, MD 20742 USA
Das, Diganta
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Varde, P. V.
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Univ Maryland, CALCE, College Pk, MD 20742 USA
Bhabha Atom Res Ctr, Homi Bhabha Natl Inst, Reactor Grp, Bombay 400085, Maharashtra, IndiaUniv Maryland, CALCE, College Pk, MD 20742 USA
Varde, P. V.
;
Pecht, Michael
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Univ Maryland, CALCE, College Pk, MD 20742 USA
City Univ Hong Kong, Ctr Prognost & Syst Hlth Management, Hong Kong, Hong Kong, Peoples R ChinaUniv Maryland, CALCE, College Pk, MD 20742 USA
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Cho, Kyung-Sang
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Lee, Eun Kyung
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Lee, Eun Kyung
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Joo, Won-Jae
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Jang, Eunjoo
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Samsung Elect, Samsung Adv Inst Technol, Mat Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Jang, Eunjoo
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Kim, Tae-Ho
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Kim, Tae-Ho
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Lee, Sang Jin
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Lee, Sang Jin
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Kwon, Soon-Jae
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Kwon, Soon-Jae
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Han, Jai Yong
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Samsung Elect, Samsung Adv Inst Technol, Display Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Han, Jai Yong
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Kim, Byung-Ki
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Samsung Elect, Samsung Adv Inst Technol, Mat Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Kim, Byung-Ki
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Choi, Byoung Lyong
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Kim, Jong Min
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
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Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Christensen, Adam
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Graham, Samuel
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Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
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Univ Maryland, CALCE, College Pk, MD 20742 USAUniv Maryland, CALCE, College Pk, MD 20742 USA
Chang, Moon-Hwan
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Das, Diganta
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Univ Maryland, CALCE, College Pk, MD 20742 USAUniv Maryland, CALCE, College Pk, MD 20742 USA
Das, Diganta
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Varde, P. V.
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h-index: 0
机构:
Univ Maryland, CALCE, College Pk, MD 20742 USA
Bhabha Atom Res Ctr, Homi Bhabha Natl Inst, Reactor Grp, Bombay 400085, Maharashtra, IndiaUniv Maryland, CALCE, College Pk, MD 20742 USA
Varde, P. V.
;
Pecht, Michael
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h-index: 0
机构:
Univ Maryland, CALCE, College Pk, MD 20742 USA
City Univ Hong Kong, Ctr Prognost & Syst Hlth Management, Hong Kong, Hong Kong, Peoples R ChinaUniv Maryland, CALCE, College Pk, MD 20742 USA
机构:
Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Cho, Kyung-Sang
;
Lee, Eun Kyung
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Lee, Eun Kyung
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Joo, Won-Jae
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Jang, Eunjoo
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Samsung Elect, Samsung Adv Inst Technol, Mat Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Jang, Eunjoo
;
Kim, Tae-Ho
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Kim, Tae-Ho
;
Lee, Sang Jin
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Lee, Sang Jin
;
Kwon, Soon-Jae
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Samsung Elect, Samsung Adv Inst Technol, Mat Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Kwon, Soon-Jae
;
Han, Jai Yong
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Samsung Elect, Samsung Adv Inst Technol, Display Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Han, Jai Yong
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Kim, Byung-Ki
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Samsung Elect, Samsung Adv Inst Technol, Mat Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
Kim, Byung-Ki
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Choi, Byoung Lyong
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Kim, Jong Min
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Samsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South KoreaSamsung Elect, Samsung Adv Inst Technol, Frontier Res Lab, Gyeonggi Do 446712, South Korea
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Christensen, Adam
;
Graham, Samuel
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h-index: 0
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Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA