V-defects and dislocations in InGaN/GaN heterostructures

被引:31
作者
Sánchez, AM
Gass, M
Papworth, AJ
Goodhew, PJ
Singh, P
Ruterana, P
Cho, HK
Choi, RJ
Lee, HJ
机构
[1] Univ Liverpool, Dept Engn, Liverpool L69 3GH, Merseyside, England
[2] ENSICAEN, CNRS, LERMAT, FRE 2149, F-14050 Caen, France
[3] Dong A Univ, Dept Met Engn, Pusan 604714, South Korea
[4] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Semicond Phys Res Ctr, Chonju 561756, South Korea
基金
英国工程与自然科学研究理事会;
关键词
320; 496; 543;
D O I
10.1016/j.tsf.2004.11.207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the growth of InGaN/GaN multi-quantum well (MQW) heterostructures by metal organic chemical vapor deposition, V-defects attached to threading dislocations have been observed and investigated. Energy-dispersive X-ray analysis and conventional transmission electron microscopy studies were carried out in order to determine the In composition and investigate the behavior of the dislocations. The V-defects are limited by {1011} lattice planes, they are attached to threading dislocations and may start at the third quantum well. The associated dislocation runs up into the overgrown GaN layer. Some (a+c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-shape defect. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:316 / 320
页数:5
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