Novel flip-chip bonding technology using chemical process

被引:1
|
作者
Yamaji, Yasuhiro [1 ]
Yokoshima, Tokihiko [1 ]
Oosato, Hirotaka [1 ]
Igawa, Noboru [1 ]
Tamura, Yuichiro [1 ]
Kikuchi, Katsuya [1 ]
Nakagawa, Hiroshi [1 ]
Aoyagi, Masahiro [1 ]
机构
[1] AIST, Nanoelect Res Inst, High Dens Interconnect Grp, AIST Tsukuba Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
来源
57TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, 2007 PROCEEDINGS | 2007年
关键词
D O I
10.1109/ECTC.2007.373905
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Reductions of bonding temperature and bonding pressure are regarded as key challenges for higher interconnection-density packages in recent years. To avoid negative factors caused by mechanical process such as thermal stress and mechanical damage of the device circuits, we have developed novel flip-chip bonding technology using electroless NiB plating of the chemical process. Bump connection of 2D pattern using electroless NiB plating was realized by controlling extraneous deposition, which is deposited on insulator layer without catalyst. The potential of the novel flip-chip bonding technology using controlled extraneous deposition of the electroless NiB plating was experimentally demonstrated using 20 mu m-pitch flip-chip test vehicle.
引用
收藏
页码:898 / +
页数:2
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