Electrostatic Discharge Performance of GaN-Based Light Emitting Diodes with Naturally Textured p-GaN Layers Grown on Vicinal Sapphires

被引：0

作者：

Liu, Yi-Jung ^{[1
]}

Tsai, Tsung-Yuan ^{[1
]}

Yen, Chih-Hung ^{[1
]}

Chen, Li-Yang ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Huang, Chien-Chang ^{[1
]}

Chen, Tai-You ^{[1
]}

Hsu, Chi-Shiang ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 12期

关键词：

ESD CHARACTERISTICS; FILMS; MISORIENTATION; SUBSTRATE; LEDS;

D O I：

10.1149/1.3486448

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrostatic discharge (ESD) characteristics of GaN-based light emitting diodes (LEDs) with textured p-GaN layers grown on c-axis vicinal sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35 degrees tilt sapphire shows the highest ESD tolerance, whereas the one grown on a 0.2 degrees tilt sapphire exhibits the poorest tolerance. This phenomenon is primarily influenced by the presence of maximum capacitance (C-m) values induced by a parasitic capacitance effect at the p-GaN/indium tin oxide interface rather than the difference in dislocation densities between LEDs. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3486448] All rights reserved.

引用

页码：H406 / H408

页数：3

共 16 条

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