Measurement and analysis of diamond Raman bandwidths

被引:23
作者
Morell, G [1 ]
Quinones, O [1 ]
Diaz, Y [1 ]
Vargas, IM [1 ]
Weiner, BR [1 ]
Katiyar, RS [1 ]
机构
[1] Univ Puerto Rico, San Juan, PR 00931 USA
关键词
diamond; Raman; bandwidth;
D O I
10.1016/S0925-9635(98)00147-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Raman spectroscopy is an excellent technique for characterization of the crystalline quality of diamond films and the amount of graphite and amorphous carbon impurities in them. Most publications on diamond include Raman spectra to show the quality of the films through a measurement of the bandwidth (FWHM) of the feature at ca. 1332.5 cm(-1) characteristic of diamond. These measurements are often done directly on the spectra without correcting them for the instrumental contribution to the bandwidth. This can lead to meaningless comparisons of diamond bandwidth measurements across research groups. In order to show to what extent interpretations based on such raw measurements can be misled, we have characterized five CVD diamond films and a natural type IIa diamond using four different sets of instrumental parameters. We present a fitting procedure to obtain the Raman bandwidth corresponding to the material under study independent of the experimental parameters. This method permits absolute comparisons among Raman bandwidths obtained under different experimental conditions, providing they are corrected for the instrumental contribution. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:1029 / 1032
页数:4
相关论文
共 13 条
[1]   SPATIALLY RESOLVED RAMAN STUDIES OF DIAMOND FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].
AGER, JW ;
VEIRS, DK ;
ROSENBLATT, GM .
PHYSICAL REVIEW B, 1991, 43 (08) :6491-6499
[2]   QUANTITATIVE MEASUREMENT OF RESIDUAL BIAXIAL STRESS BY RAMAN-SPECTROSCOPY IN DIAMOND GROWN ON A TI ALLOY BY CHEMICAL-VAPOR-DEPOSITION [J].
AGER, JW ;
DRORY, MD .
PHYSICAL REVIEW B, 1993, 48 (04) :2601-2607
[3]   High density plasma processing of diamond films on titanium: Residual stress and adhesion measurements [J].
Catledge, SA ;
Vohra, YK .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :7053-7058
[4]   NATURE OF DEFECTS AND THEIR RELATIONSHIP WITH THE GROWTH AND PROPERTIES OF DIAMOND FILMS [J].
HYER, RC ;
GREEN, M ;
SHARMA, SC .
PHYSICAL REVIEW B, 1994, 49 (20) :14573-14581
[5]   LINEWIDTHS OF PHONON LINES OF NATURAL AND SYNTHETIC DIAMONDS [J].
KIRILLOV, D ;
REYNOLDS, GJ .
APPLIED PHYSICS LETTERS, 1994, 65 (13) :1641-1643
[6]  
Levenberg K., 1944, Q APPL MATH, V2, P164, DOI [10.1090/QAM/10666, DOI 10.1090/QAM/10666]
[7]   AN ALGORITHM FOR LEAST-SQUARES ESTIMATION OF NONLINEAR PARAMETERS [J].
MARQUARDT, DW .
JOURNAL OF THE SOCIETY FOR INDUSTRIAL AND APPLIED MATHEMATICS, 1963, 11 (02) :431-441
[8]   TEMPERATURE-DEPENDENCE OF THE 1ST-ORDER RAMAN-SCATTERING BY PHONONS IN SI, GE, AND A-SN - ANHARMONIC EFFECTS [J].
MENENDEZ, J ;
CARDONA, M .
PHYSICAL REVIEW B, 1984, 29 (04) :2051-2059
[9]   Anharmonic interactions in beryllium oxide [J].
Morell, G ;
Perez, W ;
ChingPrado, E ;
Katiyar, RS .
PHYSICAL REVIEW B, 1996, 53 (09) :5388-5395
[10]   POLARIZED RAMAN-SPECTROSCOPY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS [J].
PRAWER, S ;
NUGENT, KW ;
WEISER, PS .
APPLIED PHYSICS LETTERS, 1994, 65 (18) :2248-2250