Neutron irradiation of SiC doped and magnesium rich MgB2 wires

被引:10
作者
Eisterer, Michael [1 ]
Schoeppl, K. Robert
Weber, Harald W.
Sumption, Mike D.
Bhatia, Mohit
机构
[1] Austrian Univ, Inst Atom, A-1020 Vienna, Austria
[2] Ohio State Univ, Dept Mat Sci, Columbus, OH 43210 USA
关键词
critical currents; doping; magnesium diboride; silicon carbide;
D O I
10.1109/TASC.2007.897983
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Monofilamentary SiC doped wires and multifilamentary wires made from magnesium-rich powders were exposed to thermal neutrons. The induced defects enhance the field, up to which the resistivity is zero ("irreversibility field") at 4.2 K (by about 1-2 T), and, therefore, reduce the field dependence of the critical current density. On the other hand, the transition temperature decreases from about 35 K to 32.5 K, thus restricting the beneficial effect of neutron irradiation to low temperatures. Changes of the critical current density are, discussed in terms of changes of the fundamental superconducting parameters (condensation energy, upper critical field, anisotropy) and changes of the flux pinning properties.
引用
收藏
页码:2814 / 2817
页数:4
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