Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy

We have investigated the electrical properties of GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy. We found that although the hole mobilities in Be-doped p-GaInNAs films exhibit a temperature dependence nearly identical to that for the homoepitaxial p-GaAs films, the electron mobilities in Si-doped n-GaInNAs films are strongly affected by the introduction of nitrogen into Ga(In)As. Further, the degree of scattering by the ionized impurity-like centers generated by N atoms decreased with increasing Si doping, while neutral impurity-like scattering became more dominant with increasing Si doping. These results suggest that the decrease of electron mobility and carrier concentration in Si-doped n-GaInNAs films is strongly correlated with the presence of N and Si atoms. (C) 2007 American Institute of Physics.