Modeling the Variation of Threshold Voltage, Mobility Factor and Saturation Coefficient in Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors

被引:0
作者
Hernandez-Barrios, Y. [1 ]
Avila, F. [1 ]
Estrada, M. [1 ]
Cerdeira, A. [1 ]
Moldovan, O. [2 ]
Iniguez, B. [2 ]
Picos, R. [3 ]
机构
[1] CINVESTAV IPN, Dept Ingn Elect, Mexico City 4360, DF, Mexico
[2] Univ Rovira & Virgili, DEEEA, E-43007 Tarragona, Spain
[3] Univ Illes Balears, Dept Phys, Illes Balears, Spain
来源
2016 13TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE) | 2016年
关键词
Thin film transistors; oxide semiconductors; IGZO TFTs; modeling with temperature;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Amorphous oxide semiconductor thin film transistors (AOSTFTs) with SiO2 and Indium-Gallium-Zinc-Oxides (IGZO) as dielectric and semiconductor layers respectively, are characterized in the temperature range between 300 and 400 K. The behavior of the threshold voltage, mobility factor and saturation coefficient is analyzed as function of temperature. It is shown that, using the Unified Model and Extracted Method (UMEM), the output characteristics of the devices in the linear region can be well modeled at different temperatures. This is done determining the extracted model parameters at 300 K and taking into account the law of variation with temperature for each parameter, corresponding to the specific fabrication technology of the devices. In the saturation region, an abnormal reduction of the drain current is observed. This effect has to be further studied and the representation of its behavior incorporated to the model.
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页数:4
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共 9 条
  • [1] [Anonymous], SID S
  • [2] New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions
    Cerdeira, A
    Estrada, M
    García, R
    Ortiz-Conde, A
    Sánchez, FJG
    [J]. SOLID-STATE ELECTRONICS, 2001, 45 (07) : 1077 - 1080
  • [3] Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors
    Estrada, M.
    Rivas, M.
    Garduno, I.
    Avila-Herrera, F.
    Cerdeira, A.
    Pavanello, M.
    Mejia, I.
    Quevedo-Lopez, M. A.
    [J]. MICROELECTRONICS RELIABILITY, 2016, 56 : 29 - 33
  • [4] Amorphous oxide channel TFTs
    Kumomi, Hideya
    Nomura, Kenji
    Kamiya, Toshio
    Hosono, Hideo
    [J]. THIN SOLID FILMS, 2008, 516 (07) : 1516 - 1522
  • [5] Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator
    Moon, Yeon-Keon
    Lee, Sih
    Kim, Woong-Sun
    Kang, Byung-Woo
    Jeong, Chang-Oh
    Lee, Dong-Hoon
    Park, Jong-Wan
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [6] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    Nomura, K
    Ohta, H
    Takagi, A
    Kamiya, T
    Hirano, M
    Hosono, H
    [J]. NATURE, 2004, 432 (7016) : 488 - 492
  • [7] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS
    SAMESHIMA, T
    USUI, S
    SEKIYA, M
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) : 276 - 278
  • [8] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS
    SHUR, M
    HACK, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3831 - 3842
  • [9] Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric
    Zhang, Wen-Peng
    Chen, Sun
    Qian, Shi-Bing
    Ding, Shi-Jin
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (01)